Transparent Electronics From Synthesis to Applications, 2010. ,
Thin Films, Surface origin of high conductivities in undoped In 2 O 3 films, p.16802, 2012. ,
DOI : 10.1103/PhysRevLett.108.016802
Highly electrically conductive indium???tin???oxide thin films epitaxially grown on yttria-stabilized zirconia (100) by pulsed-laser deposition, Applied Physics Letters, vol.76, issue.19, p.2740, 2000. ,
DOI : 10.1063/1.126461
Domain matching epitaxial growth of In 2 O 3 thin films on ?, Crystal Growth Design, vol.12, issue.0001, pp.2-3, 2012. ,
Domain structure and optical property of epitaxial indium oxide film deposited on MgO(100) substrate, Surface Science, vol.605, issue.9-10, pp.605-977, 2011. ,
DOI : 10.1016/j.susc.2011.02.017
Growth mechanisms and electrical properties of epitaxial In 2 O 3 films on sapphire, Journal of Applied Physics, vol.110, pp.93712-93719, 2011. ,
Structural and photoluminescence properties of single-crystalline In2O3 films grown by metal organic vapor deposition, Journal of Crystal Growth, vol.310, issue.18, pp.310-4054, 2008. ,
DOI : 10.1016/j.jcrysgro.2008.06.075
Growth of In2O3 single-crystalline film on sapphire (0001) substrate by molecular beam epitaxy, Journal of Crystal Growth, vol.289, issue.2, pp.686-689, 2009. ,
DOI : 10.1016/j.jcrysgro.2005.12.086
Growth of epitaxial zirconium-doped indium oxide (222) at low temperature by rf sputtering, CrystEngComm, vol.33, issue.10, pp.3172-3176, 2010. ,
DOI : 10.1039/c004452k
On the physical properties of In2O3 films grown on (0001) sapphire substrates by atomic layer deposition, Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films, vol.29, issue.3, pp.3-105, 2011. ,
DOI : 10.1116/1.3549146
on (001) InAs, MgO, and yttria???stabilized zirconia, Applied Physics Letters, vol.62, issue.19, pp.2332-2334, 1992. ,
DOI : 10.1063/1.109408
Real-time evolution of electrical properties and structure of indium oxide and indium tin oxide during crystalization, Scripta Materialia, pp.60-199, 2009. ,
Sputtered In2O3 and ITO thin films containing zirconium, Journal of Applied Physics, vol.105, issue.8, pp.83547-83553, 2009. ,
DOI : 10.1063/1.3116542
Twinned domains in epitaxial ZnO/SnO2-cosubstituted In2O3 thin films, Twinned domains in epitaxial ZnO/SnO 2 ?cosubstituted In 2 O 3 thin films, pp.376-381, 2007. ,
DOI : 10.1016/j.jcrysgro.2007.08.006
Nanocomposite indium tin oxide thin films: formation induced by a large oxygen deficiency and properties, Journal of Physics: Condensed Matter, vol.22, issue.4, pp.45006-45013, 2010. ,
DOI : 10.1088/0953-8984/22/4/045006
URL : https://hal.archives-ouvertes.fr/hal-01240953
Pure and Nb-doped TiO 1.5 films grown by pulsed-laser deposition for transparent p?n homojunction, Applied Surface Science, vol.257, pp.5380-5383, 2011. ,
URL : https://hal.archives-ouvertes.fr/hal-00623063
Oxygen content of YBaCuO thin films, Physica C: Superconductivity, vol.256, issue.3-4, pp.256-291, 1996. ,
DOI : 10.1016/0921-4534(95)00666-4
Thin films of oxygen deficient perovskite phases, Physical Review B, pp.75-165317, 2007. ,
URL : https://hal.archives-ouvertes.fr/hal-00182488
Nanocomposite oxide thin films grown by pulsed energy beam deposition, Applied Surface Science, vol.257, issue.12, pp.5337-5340, 2011. ,
DOI : 10.1016/j.apsusc.2010.11.139
URL : https://hal.archives-ouvertes.fr/hal-01240945
Phase separation in nanocomposite indium tin oxide thin films grown at room temperature: on the role of oxygen deficiency, Journal of Materials Chemistry, vol.7, issue.24, pp.12179-12185, 2012. ,
DOI : 10.1039/c2jm16753k
URL : https://hal.archives-ouvertes.fr/hal-00709923
Dopability, Intrinsic Conductivity, and Nonstoichiometry of Transparent Conducting Oxides, Physical Review Letters, vol.98, issue.4, pp.45501-45505, 2007. ,
DOI : 10.1103/PhysRevLett.98.045501
Nanostructures on Cubic Zirconia, Nano Letters, vol.10, issue.9, pp.3740-3746, 2010. ,
DOI : 10.1021/nl102403t
Defects and interfaces in epitaxial ZnO/??-Al2O3 and AlN/ZnO/??-Al2O3 heterostructures, Journal of Applied Physics, vol.84, issue.5, pp.2597-2601, 1998. ,
DOI : 10.1063/1.368440
RHEED analysis of interface growth modes of TiN films on Si(001) produced by crossed beam laser ablation, Applied Surface Science, vol.127, issue.129, pp.127-129, 1998. ,
DOI : 10.1016/S0169-4332(97)00618-1
Substrate surface step effects on microstructure of epitaxial films, Applied Physics Letters, vol.61, issue.26, pp.3116-3117, 1992. ,
DOI : 10.1063/1.107978
-type structure, Physical Review B, vol.84, issue.1, pp.14104-14116, 2011. ,
DOI : 10.1103/PhysRevB.84.014104
URL : https://hal.archives-ouvertes.fr/hal-00259071
Revealed by First-Principles Calculations and X-Ray Spectroscopy, Nature of the band gap of In 2 O 3 revealed by first principles calculations and Xray spectroscopy, pp.167402-167406, 2008. ,
DOI : 10.1103/PhysRevLett.100.167402
Growth of In2O3(100) on Y-stabilized ZrO2(100) by O-plasma assisted molecular beam epitaxy, Applied Physics Letters, vol.92, issue.9, pp.92117-92120, 2008. ,
DOI : 10.1063/1.2889500
Indium-oxide polymorphs from first principles: Quasiparticle electronic states, Physical Review B, vol.77, issue.15, pp.155107-155117, 2008. ,
DOI : 10.1103/PhysRevB.77.155107
High electron mobility of indium oxide grown on yttria-stabilized zirconia, Journal of Applied Physics, vol.99, issue.12, pp.123703-123709, 2006. ,
DOI : 10.1063/1.2203722
Carrier transport in polycrystalline ITO and ZnO:Al II: The influence of grain barriers and boundaries, Thin Solid Films, vol.516, issue.17, pp.5829-5835 ,
DOI : 10.1016/j.tsf.2007.10.082
The electronic properties of amorphous and crystallized In2O3 films, Journal of Applied Physics, vol.100, issue.9, pp.93706-93714, 2006. ,
DOI : 10.1063/1.2358829
Ferromagnetism and spin-polarized charge carriers in In 2 O 3 thin films, Physical Review B, pp.79-165208, 2009. ,
Electrical transport properties in indium tin oxide films prepared by electron-beam evaporation, Journal of Applied Physics, vol.104, issue.7, pp.73711-73716, 2008. ,
DOI : 10.1063/1.2988901
Metal-semiconductor transition in epitaxial ZnO thin films, Journal of Applied Physics, vol.106, issue.10, pp.106710-106717, 2009. ,
DOI : 10.1063/1.3259412
URL : https://hal.archives-ouvertes.fr/hal-01240966
Metallic conductivity and metal-semiconductor transition in Ga-doped ZnO, Applied Physics Letters, vol.88, issue.3, pp.32106-32109, 2006. ,
DOI : 10.1063/1.2165281
Disordered electronic systems, Reviews of Modern Physics, vol.57, issue.2, pp.287-337, 1985. ,
DOI : 10.1103/RevModPhys.57.287
Weak localization effects in some metallic perovskites, The European Physical Journal B, vol.71, issue.4, pp.439-444, 2004. ,
DOI : 10.1140/epjb/e2004-00207-9
Oxygen-induced metal-insulator-transition on single crystalline metal oxide wires, Journal of Applied Physics, vol.111, issue.1, pp.13713-13719, 2012. ,
DOI : 10.1063/1.3675204
Origin of definite Hall voltage and positive slope in mobility-donor density relation in disordered oxide semiconductors, Applied Physics Letters, vol.96, issue.12, pp.122103-122106, 2010. ,
DOI : 10.1063/1.3364131