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Article Dans Une Revue Applied Physics Letters Année : 2011

Strong suppression of internal electric field in GaN/AlGaN multi-layer quantum dots in nanowires

Rudeesun Songmuang
P. Sinha
  • Fonction : Auteur
Martien den Hertog
Régis André
T. Ben
  • Fonction : Auteur
D. Gonzalez
  • Fonction : Auteur
Henri Mariette
Eva Monroy

Résumé

Photoluminescence (PL) studies of GaN/Al(x)Ga(1-x)N quantum dots (QDs) in nanowires demonstrate an efficient carrier confinement, resulting in thermally stable decay times up to 300 K. The evolution of the PL transition energy as a function of both the QD height and the Al mole fraction in the barriers, as well as the evolution of the decay time as a function of the QD height, point out that a built-in electric field is significantly smaller than the value expected from the spontaneous polarization discontinuity. This is explained by the uniaxial compressive strain resulting from the spontaneously formed Al-rich shell that envelops the QD stack
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Dates et versions

hal-01000144 , version 1 (04-06-2014)

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Citer

Rudeesun Songmuang, Dipankar Kalita, P. Sinha, Martien den Hertog, Régis André, et al.. Strong suppression of internal electric field in GaN/AlGaN multi-layer quantum dots in nanowires. Applied Physics Letters, 2011, 99 (14), pp.141914. ⟨10.1063/1.3646389⟩. ⟨hal-01000144⟩
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