Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe

A. S. Gurevich , V.P. Kochereshko (1) , J. Bleuse (2) , Henri Mariette (3) , A. Waag (4) , R. Akimoto

1 A.F. Ioffe Physical-Technical Institute
2 NPSC - Nanophysique et Semiconducteurs
3 NEEL - NPSC - Nanophysique et Semiconducteurs
4 Institute of Semiconductor Technology

The existence of intrinsic carrier interface states in heterostructures with no common atom at the interface (such as ZnSe/BeTe) is shown experimentally by ellipsometry and photoluminescence spectroscopy. These states are located on interfaces and lie inside the effective bandgap of the structure; they are characterized by a high density and a long lifetime. A tight binding model confirms theoretically the existence of these states in ZnSe/BeTe heterostructures for a ZnTe-type interface, in contrast to the case of the BeSe-type interface for which they do not exist.

A. S. Gurevich, V.P. Kochereshko, J. Bleuse, Henri Mariette, A. Waag, et al.. Observation of interface carrier states in no-common-atom heterostructures ZnSe/BeTe. Nanotechnology, 2011, 22 (36), pp.365707. ⟨10.1088/0957-4484/22/36/365707⟩. ⟨hal-00999773⟩