Evidence for quantum-confined Stark effect in GaN/AlN quantum dots in nanowires

Abstract : Semiconductor nanowires have the potential to outperform two-dimensional structures, for instance for light-emitting applications. However, the intrinsic fundamental properties of heterostructures in nanowires still remain to be assessed and compared to their two-dimensional counterparts. We show that polar GaN/AlN axial heterostructures in nanowires grown by plasma-assisted molecular-beam epitaxy are subject to a clear quantum-confined Stark effect. However, the magnitude of this effect is smaller than for two-dimensional structures due to the reduction in piezoelectric polarization that occurs thanks to elastic relaxation which is favored by the nanowire free surfaces. Moreover, we show by temperature-dependent photoluminescence measurement and single-photon correlation measurements that these heterostructures behave like quantum dots.
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Physical Review B : Condensed matter and materials physics, American Physical Society, 2009, 80, pp.121305(R). 〈10.1103/PhysRevB.80.121305〉
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Contributeur : Bruno Gayral <>
Soumis le : mardi 3 juin 2014 - 17:13:30
Dernière modification le : mercredi 22 août 2018 - 01:03:23

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Julien Renard, Rudeesun Songmuang, Gabriel Tourbot, Catherine Bougerol, Bruno Daudin, et al.. Evidence for quantum-confined Stark effect in GaN/AlN quantum dots in nanowires. Physical Review B : Condensed matter and materials physics, American Physical Society, 2009, 80, pp.121305(R). 〈10.1103/PhysRevB.80.121305〉. 〈hal-00999581〉

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