Electro-Thermal Behaviour of a SiC JFET Stressed by Lightning Induced Over-Voltages

Dominique Bergogne (1) , Cyril Buttay (1) , Rémi Robutel (1) , Fabien Dubois (1) , Rémy Ouaida (1) , Hervé Morel (1)

1 AMPERE - Ampère

SiC JFETs are experimentally tested to verify their robustness against Lightning induced strokes. The experimental set-up is fully described. A lightning surge generator is built and a SiC JFET is stressed. The full thermal response of the SiC JFET internal temperature is obtained from a specific temperature estimation technique at different time steps during the surge test. This short time thermal response is compared and validated by a conventional 1-D thermal model. This work shows that for a moderate lightning stroke, according to standards [1], the JFET temperature rise is less than 60°C, which is acceptable in most circumstances.

Domaines: Energie électrique

Dominique Bergogne, Cyril Buttay, Rémi Robutel, Fabien Dubois, Rémy Ouaida, et al.. Electro-Thermal Behaviour of a SiC JFET Stressed by Lightning Induced Over-Voltages. EPE Journal - European Power Electronics and Drives, 2013, 23 (3), pp.5--12. ⟨hal-00997389⟩