Integrated packaging allows for improvement in switching characteristics of silicon carbide devices

Cyril Buttay (1) , Khalil El Falahi (1) , Rémi Robutel (1) , Stanislas Hascoët (1) , Christian Martin (1) , Bruno Allard (1) , Mark C. Johnson (2)

1 EE - Ampère, Département Energie Electrique
2 UON - University of Nottingham, UK

Silicon Carbide devices can achieve very high switching speed, but that requires specific packaging solutions. In this paper, we discuss the effects of parasitic devices on the switching behaviour. Three different prototypes are then presented, offering three different packaging and integration approaches (low inductance packaging, integration of the gate drivers, integration of common-mode filtering). The consequences on the switching speed are discussed.

Domaines: Energie électrique

Cyril Buttay, Khalil El Falahi, Rémi Robutel, Stanislas Hascoët, Christian Martin, et al.. Integrated packaging allows for improvement in switching characteristics of silicon carbide devices. PCIM Europe 2014, May 2014, Nuremberg, Germany. 8 p. ⟨hal-00997355⟩