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Communication Dans Un Congrès Année : 2010

BJT static behavior improvement by modification of the epitaxial layer

Résumé

In this paper, high voltage Bipolar Junction Transistors are presented and compared in order to suggest a bidirectional switch for household appliances with fully turn-on, turn-off control. A comparative theoretical study, using 2D simulations, shows that concepts like "superjunctions" and "floating islands" improve the static current gain without unwanted behavior like parasitic diodes.
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Dates et versions

hal-00991551 , version 1 (15-05-2014)

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  • HAL Id : hal-00991551 , version 1

Citer

Loïc Théolier, Luong Viet Phung, Nathalie Batut, Ambroise Schellmanns, Yves Raingeaud, et al.. BJT static behavior improvement by modification of the epitaxial layer. 27th International Conference on Microelectronics Proceedings (MIEL), 2010, May 2010, Nis, Serbia. pp.79-82. ⟨hal-00991551⟩
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