S. E. N-d, D. E. G-r-o-o-m, N. P. I-o, and R. J. , S t o v e r ,a n dM .W e i Fully-depleted, back-illuminated charge-coupled devices fabricated on high-resistivity silicon, IEEE Trans. Electron Devices, vol.50, issue.1, pp.101-114, 2003.

K. Fife, A. E. Gamal, and H. S. Wong, A Multi-Aperture Image Sensor With 0.7 <formula formulatype="inline"><tex Notation="TeX">$\mu{\hbox{m}}$</tex></formula> Pixels in 0.11 <formula formulatype="inline"><tex Notation="TeX">$\mu{\hbox{m}}$</tex> </formula> CMOS Technology, IEEE Journal of Solid-State Circuits, vol.43, issue.12, pp.2990-3005, 2008.
DOI : 10.1109/JSSC.2008.2006457

G. Lepage, J. Bogaerts, and G. Meynants, Time-Delay-Integration Architectures in CMOS Image Sensors, IEEE Transactions on Electron Devices, vol.56, issue.11, pp.2524-2533, 2009.
DOI : 10.1109/TED.2009.2030648

G. Prigozhin and B. Burke, CCD Charge Injection Structure at Very Small Signal Levels, IEEE Transactions on Electron Devices, vol.55, issue.8, pp.2111-2120, 2008.
DOI : 10.1109/TED.2008.926732

M. F. Tompsett, Surface potential equilibration method of setting charge in charge-coupled devices, IEEE Transactions on Electron Devices, vol.22, issue.6, pp.305-309, 1975.
DOI : 10.1109/T-ED.1975.18127

A. Theuwissen, CMOS image sensors: State-of-the-art and future perspectives, Proc. Eur. Solid-State Device Res. Conf, pp.21-27, 2007.

R. Hoople and J. P. Krusius, Characteristics of submicrometer gaps in buried-channel CCD structures, IEEE Transactions on Electron Devices, vol.38, issue.5, pp.1175-1181, 1991.
DOI : 10.1109/16.78395

T. Lee, T. J. Tredwell, B. C. Burkey, T. M. Kelly, R. P. Khosla et al., A 360 000 pixel charge-coupled color-image sensor for imaging photographic negative, IEEE Trans. Electron Devices, vol.32, issue.8, pp.1439-1445, 1985.

N. Mutoh, S. Kawai, T. Yamada, Y. Kawakami, T. Nakano et al., Driving voltage reduction of shift registers in IT-CCD image sensors, Proc. IEEE, pp.17-18, 1997.

A. Waczynski, E. J. Polidan, P. W. Marshall, R. A. Reed, S. D. Johnson et al., A comparison of charge transfer efficiency measurement techniques on proton damaged n-channel CCDs for the Hubble Space Telescope Wide-Field Camera 3, IEEE Transactions on Nuclear Science, vol.48, issue.6, pp.1807-1814, 2001.
DOI : 10.1109/23.983134

J. Janesick, Scientific Charge-Coupled Devices, Optical Engineering, vol.26, issue.8, 2001.
DOI : 10.1117/12.7974139

G. R. Hopkinson, T. M. Goodman, and S. R. Prince, Use and Calibration of Detector Array Equipment, 2004.
DOI : 10.1117/3.2265066

T. Hardy, R. Murowinski, and M. J. Deen, Charge transfer efficiency in proton damaged CCD's, IEEE Transactions on Nuclear Science, vol.45, issue.2, pp.154-163, 1998.
DOI : 10.1109/23.664167

J. Janesick, G. Soli, T. Elliot, and S. Collins, The effects of proton damage on charge-coupled devices, Proc. SPIE, pp.87-108, 1991.

R. W. Brodersen, D. D. Buss, and A. F. Tasch, Experimental characterization of transfer Efficiency in charge-coupled devices, IEEE Transactions on Electron Devices, vol.22, issue.2, pp.40-46, 1975.
DOI : 10.1109/T-ED.1975.18073

M. F. Tompsett, The quantitative effects of interface states on the performance of charge-coupled devices, IEEE Transactions on Electron Devices, vol.20, issue.1, pp.45-55, 1973.
DOI : 10.1109/T-ED.1973.17607

J. Janesick, T. Elliot, J. Andrews, J. Tower, and J. Pinter, Fundamental performance differences of CMOS and CCD imagers: part V, Sensors, Cameras, and Systems for Industrial and Scientific Applications XIV, pp.1-35, 2013.
DOI : 10.1117/12.2008268

E. K. Banghart, J. P. Lavine, E. A. Trabka, E. T. Nelson, and B. C. Burkey, A model for charge transfer in buried-channel charge-coupled devices at low temperature, IEEE Transactions on Electron Devices, vol.38, issue.5, pp.1162-1174, 1991.
DOI : 10.1109/16.78394

J. Borg and J. Johansson, Evaluation of a Surface-Channel CCD Manufactured in a Pinned Active-Pixel-Sensor CMOS Process, IEEE Transactions on Electron Devices, vol.58, issue.8, pp.2660-2664, 2011.
DOI : 10.1109/TED.2011.2156798

K. Fife, A. Gamal, and H. Wong, A 0.5µm pixel frametransfer CCD image sensor in 110nm CMOS, Proc. IEEE IEDM, pp.1003-1006, 2007.