Piezoelectric Aluminum Nitride Resonator for Oscillator

Abstract : This work investigates properties of the thin film elongation acoustic resonator (TFEAR) operating at megahertz frequencies in air. This resonator is composed of a piezoelec- tric layer of AlN sandwiched between 2 Al electrodes. TFEAR works in the extensional mode excited via AlN d31 piezoelectric coefficient. A 3D finite element method (3D-FEM) analysis us- ing ANSYS software has been performed to model static mod- al and harmonic behavior of the TFEAR. To consider insertion losses into the substrate, equivalent electrical models based on a modified Butterworth-Van Dyke (MBVD) circuit have been improved by adding extra dissipative elements. Thus, a whole model for the on-wafer characterization setup is given, allowing for automatic de-embedding of the present TFEAR equivalent circuit. Quality factors Q as high as 2500 in air have been recorded with motional resistance lower than 400 . A first oscillator based on a TFEAR resonator was also designed and tested.
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Article dans une revue
IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, Institute of Electrical and Electronics Engineers, 2010, 57 (3), pp.513-517. 〈10.1109/TUFFC.2010.1441〉
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Olivier Mareschal, Sebastien Loiseau, Aurelien Fougerat, Laurie Valbin, Gaelle Lissorgues, et al.. Piezoelectric Aluminum Nitride Resonator for Oscillator. IEEE Transactions on Ultrasonics, Ferroelectrics and Frequency Control, Institute of Electrical and Electronics Engineers, 2010, 57 (3), pp.513-517. 〈10.1109/TUFFC.2010.1441〉. 〈hal-00989677〉

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