Thermal Laser Stimulation technique for AlGaN/GaN HEMT technologies improvement

Dominique Thales R&t Carisetti , N. Sarazin , Nathalie Labat (1) , Nathalie Malbert (2) , Arnaud Curutchet (1) , Benoit Lambert , Laurent Brunel (3) , K. Rousseau , Eddy Romain Latu , Thomas Frank (4)

1 IMS - Laboratoire de l'intégration, du matériau au système
2 NANOELECTRONIQUE/III-V
3 UMS
4 serma Technologies Grenoble

As well as the improvement of the GaN MMIC (Monolithic Microwave Integrated Circuit) performances, the defects localization and the failure analysis of these devices are very challenging. Electroluminescence in Visible-Near Infrared range is currently used for leakage paths localization in the drain-source area of III-V components. Some difficulties may appear in the implementation of this defect localization technique for devices with large gate to source Field Plate (FP) structure as shown. Indeed, the field plate metal is masking part of the transistor active area and the gate. In this case, backside electroluminescence is usually required but the sample preparation can affect the thermal management of the device and its electrical stability. In this paper, we apply Thermal Laser Stimulation (TLS) techniques (OBIRCh, TIVA) on the die surface in order to localize defects in GaN based HEMTs

Domaines: Electronique

Dominique Thales R&t Carisetti, N. Sarazin, Nathalie Labat, Nathalie Malbert, Arnaud Curutchet, et al.. Thermal Laser Stimulation technique for AlGaN/GaN HEMT technologies improvement. ISTFA 2013 ( International Symp. For Testing and Failure Analysis), Nov 2013, San Jose, United States. ⟨hal-00989606⟩