Investigation of gate and drain leakage currents of AlGaN/GaN HEMTs at subthreshold regime for temperature range 300K - 400K

Mehdi Rzin (1) , Arnaud Curutchet (2) , Nathalie Labat (1) , Nathalie Malbert (2) , Laurent Brunel (3) , Benoit Lambert

1 IMS - Laboratoire de l'intégration, du matériau au système
2 NANOELECTRONIQUE/III-V
3 UMS

This paper studies the gate and drain leakage currents of AlGaN/GaN high electron mobility transistors on SiC at subthreshold regime for the temperature range 300K - 400K. Positive and negative temperature dependences of the reverse gate current were identified depending on the gate-source bias. The second one might be related to traps located in AlGaN layer or to a virtual gate in the gate drain access region. This was investigated by DC and drain current transient measurements to identify trap effects and their signature

Mots clés: High Electron Mobility Transistor (HEMT); GaN; leakage current; transient; trap

Domaines: Electronique

Mehdi Rzin, Arnaud Curutchet, Nathalie Labat, Nathalie Malbert, Laurent Brunel, et al.. Investigation of gate and drain leakage currents of AlGaN/GaN HEMTs at subthreshold regime for temperature range 300K - 400K. European Microwave week (EuMIC 2013), Oct 2013, Nüremberg, Germany. pp.236-239. ⟨hal-00987798⟩