Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells

Alexandre Bazin (1) , Kevin Lenglé (2) , Mathilde Gay (2) , Paul Monnier (1) , Laurent Bramerie (2) , Remy Braive (1) , Grégoire Beaudoin (1) , Isabelle Sagnes (1) , Rama Raj (1) , Fabrice Raineri (1)

1 LPN - Laboratoire de photonique et de nanostructures
2 FOTON - Fonctions Optiques pour les Technologies de l'informatiON

Ultrafast switching with low energies is demonstrated using InP photonic crystal nanocavities embedding InGaAs surface quantum wells heterogeneously integrated to a silicon on insulator waveguide circuitry. Thanks to the engineered enhancement of surface non radiative recombination of carriers, switching time is obtained to be as fast as 10 ps. These hybrid nanostructures are shown to be capable of achieving systems level performance by demonstrating error free wavelength conversion at 10 Gbit/s with 6 mW switching powers.

Domaines: Optique [physics.optics]

Alexandre Bazin, Kevin Lenglé, Mathilde Gay, Paul Monnier, Laurent Bramerie, et al.. Ultrafast all-optical switching and error-free 10 Gbit/s wavelength conversion in hybrid InP-silicon on insulator nanocavities using surface quantum wells. Applied Physics Letters, 2014, 104 (1), pp.011102. ⟨10.1063/1.4861121⟩. ⟨hal-00983654⟩