Starck effects model used to highlight selective activation of failure mechanisms in MQW InGaN/GaN light emitting diodes

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  • HAL Id : hal-00979617, version 1

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Yannick Deshayes, Laurent Bechou, Yves Ousten. Starck effects model used to highlight selective activation of failure mechanisms in MQW InGaN/GaN light emitting diodes. IEEE Transactions on Device and Materials Reliability, Institute of Electrical and Electronics Engineers, 2010, 10 (Issue 1), pp.164-170. ⟨hal-00979617⟩

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