Voltage control of magnetism in ferromagnetic structures (Conference Paper)

Liza Herrera-Diez (1) , W. Lin (2) , Anne Bernand-Mantel (1) , Laurent Ranno (1) , Dominique Givord (1) , Laurent Vila (3) , Patrick Warin (3) , A. Marty (3) , N. Lei (4, 2) , T. Devolder (4, 2) , J.V. Kim (4, 2) , N. Vernier (4, 2) , P. Lecoeur (4, 2) , Dafine Ravelosona (4, 2)

1 NEEL - MNM - Micro et NanoMagnétisme
2 IEF - Institut d'électronique fondamentale
3 NM - Nanostructures et Magnétisme
4 IEF

Until now, spintronics devices have relied on polarized currents, which still generate relatively high dissipation, particularly for nanodevices based on DW motion. A novel solution to further reduce power consumption is emerging, based on electric field (E) gating to control the magnetic state. Here, we will describe the state of the art and our recent experiments on voltage induced changes in the magnetic properties of ferromagnetic metals. A thorough description of the advances in terms of control of intrinsic properties such as magnetic anisotropy and ferromagnetic transition temperature as well as in intrinsic properties like coercive field and domain wall motion will be presented. Additionally, a section will be dedicated to the summary of the key aspects concerning the fabrication and performance of magneto-electric field-effect devices.

Mots clés: electric-field effect; Magnetic anisotropy; magnetic domain wall; magneto-electric devices

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Liza Herrera-Diez, W. Lin, Anne Bernand-Mantel, Laurent Ranno, Dominique Givord, et al.. Voltage control of magnetism in ferromagnetic structures (Conference Paper). Proceedings of SPIE, the International Society for Optical Engineering, 2012, Spintronics V, 8461, pp.84610Y. ⟨10.1117/12.982039⟩. ⟨hal-00969333⟩