Deep levels in homoepitaxial boron-doped diamond films studied by capacitance transient spectroscopies - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue physica status solidi (a) Année : 2008

Deep levels in homoepitaxial boron-doped diamond films studied by capacitance transient spectroscopies

Résumé

Deep level transient spectroscopies (DLTS) applied to Schottky junctions made on homoepitaxial boron-doped diamond films show the existence of two traps. A deep acceptor, negatively charged and strongly attractive for holes, 1.57 eV above the valence band edge displays the characteristic features of a complex defect due to interacting centers and impurities, also displaying some evolutions after thermal cycles, possibly due to hydrogen effusion or diffusion. It is tentatively ascribed to association of a boron atom, a vacancy and several hydrogen atoms. A deep donor, 1.13 eV above the valence band edge, able to compensate the boron acceptors, is attributed to a defect correlated with dislocations. It could be due to the positively charged carbon vacancy. These conclusions are drawn from the Fourier transform-DLTS results coupled with isothermal time domain algorithms allowing the discrimination of multiple emission rates with high resolution.
Fichier principal
Vignette du fichier
pss_Muret_Pernot_Teraji_Ito_SBDD13rev.pdf (306.17 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-00967259 , version 1 (28-03-2014)

Identifiants

Citer

Pierre Muret, Julien Pernot, Tokuyuki Teraji, Toshimishi Ito. Deep levels in homoepitaxial boron-doped diamond films studied by capacitance transient spectroscopies. physica status solidi (a), 2008, 205 (9), pp.2179-2183. ⟨10.1002/pssa.200879725⟩. ⟨hal-00967259⟩

Collections

UGA CNRS NEEL
118 Consultations
363 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More