Scanning tunneling microscopy and angle-resolved photoelectron spectroscopy studies of graphene on SiC (C-face) substrate grown by Si flux-assisted molecular beam epitaxy

I. Razado-Colambo (1, 2) , J.P. Nys (1) , X. Wallart (1) , S. Godey (1) , J. Avila (2) , M.C. Asensio (2) , D. Vignaud (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 SSOLEIL - Synchrotron SOLEIL

I. Razado-Colambo, J.P. Nys, X. Wallart, S. Godey, J. Avila, et al.. Scanning tunneling microscopy and angle-resolved photoelectron spectroscopy studies of graphene on SiC (C-face) substrate grown by Si flux-assisted molecular beam epitaxy. 4th Graphene Conference, Graphene 2014, 2014, Toulouse, France. 2 p. ⟨hal-00962361⟩