Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires

Gilles Nogues (1) , Thomas Auzelle (2, 3) , Martien den Hertog (4) , Bruno Gayral (2, 3) , Bruno Daudin (2, 3)

1 NEEL - NPSC - Nanophysique et Semiconducteurs
2 SP2M - UMR 9002 - Service de Physique des Matériaux et Microstructures
3 NPSC - Nanophysique et Semiconducteurs
4 NEEL - MRS - Matériaux, Rayonnements, Structure

We perform correlated studies of individual GaN nanowires in scanning electron microscopy combined to low temperature cathodoluminescence, microphotoluminescence, and scanning transmission electron microscopy. We show that some nanowires exhibit well localized regions emitting light at the energy of a stacking fault bound exciton (3.42 eV) and are able to observe the presence of a single stacking fault in these regions. Precise measurements of the cathodoluminescence signal in the vicinity of the stacking fault give access to the exciton diffusion length near this location.

Mots clés: Nanowire; Diffusion; Cathodoluminescence; TEM; Excitons; Doping; epitaxy

Domaines: Systèmes mésoscopiques et effet Hall quantique [cond-mat.mes-hall]

Gilles Nogues, Thomas Auzelle, Martien den Hertog, Bruno Gayral, Bruno Daudin. Cathodoluminescence of stacking fault bound excitons for local probing of the exciton diffusion length in single GaN nanowires. Applied Physics Letters, 2014, 104 (10), pp.102102. ⟨10.1063/1.4868131⟩. ⟨hal-00958223⟩