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Communication Dans Un Congrès Année : 2013

Deterministic placement of doping atoms on hydroxylated surfaces

Résumé

An improved approach of semi-conductor doping by Molecular Layer Deposition (MLD) is investigated. Here, dopant-containing molecules are directly grafted onto silica-coated silicon wafers and optimized ligands can provide more effective dopant drive-in annealing. The grafting approach is validated on non-porous silica and successfully transferred onto silicon wafers.
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hal-00956279 , version 1 (18-08-2022)

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L. Mathey, L. Veyre, H. Fontaine, V. Enyedi, K. Yckache, et al.. Deterministic placement of doping atoms on hydroxylated surfaces. International Conference on Solid State Devices and Materials, SSDM 2013, 2013, Fukuoka, Japan. ⟨10.7567/SSDM.2013.B-3-2⟩. ⟨hal-00956279⟩
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