Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces

Pierre Capiod (1) , Tao Xu (1, 2) , Jean-Philippe Nys (1) , Maxime Berthe (1) , Gilles Patriarche (3) , Liverios Lymperakis (4) , J. Neugebauer (4) , Philippe Caroff (1, 5) , Rafal E Dunin-Borkowski (6) , Philipp Ebert (6) , B. Grandidier (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 Key Laboratory of Advanced Display and System Application
3 LPN - Laboratoire de photonique et de nanostructures
4 Max-Planck-Institut für Eisenforschung GmbH
5 Department of Electronic Materials Engineering
6 Peter Grünberg Institut

Domaines: Sciences de l'ingénieur [physics]

Pierre Capiod, Tao Xu, Jean-Philippe Nys, Maxime Berthe, Gilles Patriarche, et al.. Band offsets at zincblende-wurtzite GaAs nanowire sidewall surfaces. 4th International Workshop on Epitaxial Growth and Fundamental Properties of Semiconductor Nanostructures, SemiconNano 2013, Sep 2013, Lake Arrowhead, CA, United States. ⟨hal-00956276⟩