Failure initiation of IGBT due to emitter contact degradation: a 2D finite elements electro-thermal multi-cell simulation approach under hard switching, short-circuit and avalanche operations - Archive ouverte HAL Accéder directement au contenu
Communication Dans Un Congrès Année : 2013

Failure initiation of IGBT due to emitter contact degradation: a 2D finite elements electro-thermal multi-cell simulation approach under hard switching, short-circuit and avalanche operations

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Electronique
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Dates et versions

hal-00955738 , version 1 (05-03-2014)

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  • HAL Id : hal-00955738 , version 1

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Kamal El Boubkari, Stephane Azzopardi, Loïc Théolier, Raphaël Roder, Eric Woirgard, et al.. Failure initiation of IGBT due to emitter contact degradation: a 2D finite elements electro-thermal multi-cell simulation approach under hard switching, short-circuit and avalanche operations. IEEE Applied Power Electronics Conference (APEC), Mar 2013, Long Beach, United States. pp.2408 - 2415. ⟨hal-00955738⟩
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