0.2-μm InP/GaAsSb DHBT power performance with 10 mW/μm² and 25% PAE at 94 GHz

Mohammed Zaknoune (1, 2) , Etienne Okada (1) , Estelle Mairiaux (1) , Yannick Roelens (1) , Damien Ducatteau (1) , Peter Frijlink (3) , Marc Rocchi (3) , Hassan Maher (3)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 ANODE - IEMN - Advanced NanOmeter DEvices - IEMN
3 OMMIC

We report a 94-GHz large-signal load-pull characterization of InP/GaAsSb double heterojunction bipolar transistors. The investigated devices have an emitter area of 0.20 × 9.5 μm2. Biased for highest power added efficiency (PAE), an output power of 6.62 mW/μm2 (11 dBm), a power gain of 5.2 dB, and a PAE of 27.7% have been obtained. Biased for highest output power, 10.26 mW/μm2 (12.8 dBm) has been achieved without significant degradation of the PAE (25.2%) and the power gain (4.5 dB).

Mots clés: power; load pull; 94 GHz; DHBT; GaAsSb/InP

Domaines: Sciences de l'ingénieur [physics]

Mohammed Zaknoune, Etienne Okada, Estelle Mairiaux, Yannick Roelens, Damien Ducatteau, et al.. 0.2-μm InP/GaAsSb DHBT power performance with 10 mW/μm² and 25% PAE at 94 GHz. IEEE Electron Device Letters, 2014, 35 (3), pp.321-323. ⟨10.1109/LED.2014.2298251⟩. ⟨hal-00955679⟩