Limitations of the impulse response of GaAs MSM photoswitch
Résumé
As symmetrical data characteristics I (V) of the Metal-Semiconductor-Metal (MSM) photodetector, we wondered how this device can be used as a photoswitch as well as the low temperature on GaAs photoconductive generally used for this purpose. The impulse response of interdigitated metal-semiconductor-metal photoswitch fabricated on GaAs non-intentional doped (NID) absorbing layer is investigated. The photocurrent response was measured after excitation and we found that the screening of the dark electric field and charge accumulation exceedingly modify the drift conditions of the photogenerated electrons and holes in active region of the MSM photoswitch.