About the key factors driving the resistivity of AuOx thin films grown by reactive magnetron sputtering

Vincent Dolique (1) , Anne-Lise Thomann (1) , Eric Millon (1) , Agnes Petit (1) , Pascal Brault (1)

1 GREMI - Groupe de recherches sur l'énergétique des milieux ionisés

Deposition of gold containing oxygen thin films was carried out at room temperature onto silicon substrates by reactive magnetron sputtering under Ar/O2 plasma. Nuclear reaction analysis of films shows that different oxygen concentrations (AuOx with x = 0 to 1.2) can be reached depending on the growth conditions. X-ray diffraction and scanning electron microscopy of the deposited samples evidence nanocrystallised films formed of pure Au phase or of Au metal mixed to a low ordered Au2O3 phase. The films display a columnar growth with grains in the 20-30 nm size range. A higher resistivity than that of pure gold is systematically measured by a four probe method. The electrical resistivity of the films was found to be correlated to the mean oxygen amount, and also to the microstructure of the Au phase.

Mots clés: gold oxide; reactive magnetron sputtering deposition; thin film growth; electrical conductivity; oxygen content

Domaines: Plasmas

Vincent Dolique, Anne-Lise Thomann, Eric Millon, Agnes Petit, Pascal Brault. About the key factors driving the resistivity of AuOx thin films grown by reactive magnetron sputtering. Applied Surface Science, 2014, 295, pp.194- 197. ⟨10.1016/j.apsusc.2014.01.026⟩. ⟨hal-00952818⟩