1900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removal

Nicolas Herbecq (1) , Isabelle Roch-Jeune (1) , Nathalie Rolland (1) , Domenica Visalli (2) , Joff Derluyn (2) , Stefan Degroote (2) , Marianne Germain (2) , F Medjdoub (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 EpiGaN

We demonstrate a high-voltage low on-resistance AlN/GaN/AlGaN double heterostructure grown by metal-organic chemical vapor deposition on a silicon (111) substrate using a total buffer thickness of less than 2 μm. A fully scalable local substrate removal technique was developed to dramatically enhance the off-state breakdown voltage of the transistors. The three-terminal breakdown voltage of these devices using a gate-drain distance of 15μm increased significantly, from 750V to 1.9 kV, after local substrate removal. The high two-dimensional electron gas carrier density (2.3 ' 1013cm%2) associated with the low sheet resistance enables a record combination of a specific on-resistance (1.6mΩcm2) and high breakdown voltage for GaN-on-Si transistors.

Nicolas Herbecq, Isabelle Roch-Jeune, Nathalie Rolland, Domenica Visalli, Joff Derluyn, et al.. 1900 V, 1.6 mΩ cm2 AlN/GaN-on-Si power devices realized by local substrate removal. Japanese Journal of Applied Physics, part 2 : Letters, 2014, 7 (3), 034103, 3 p. ⟨10.7567/APEX.7.034103⟩. ⟨hal-00950148⟩