Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells for hybrid integration

S. Valdueza-Felip (1, 2) , A. Mukhtarova (1, 2) , Louis Grenet (3) , Catherine Bougerol (4) , C. Durand (1, 2) , Joël Eymery (1, 5) , Eva Monroy (1, 2)

1 SP2M - UMR 9002 - Service de Physique des Matériaux et Microstructures
2 NPSC - Nanophysique et Semiconducteurs
3 LITEN - Laboratoire d'Innovation pour les Technologies des Energies Nouvelles et les nanomatériaux
4 NEEL - NPSC - Nanophysique et Semiconducteurs
5 NRS - Nanostructures et Rayonnement Synchrotron

We report on the photovoltaic characteristics of solar cells based on 15 and 30 In x Ga 1 % x N / GaN ( x = 0.10 and 0.19) multiquantum wells (MQWs) grown on sapphire. Doubling the number of MQWs increases the peak external quantum ef fi ciency by a factor of 2 for both In contents. Devices with 19% In, with a spectral cutoff at 465nm, exhibit an open-circuit voltage of 1.7Vand a short-circuit current density of 3.00mA / cm 2 under 1 sun AM1.5G illumination, leading to a conversion ef fi ciency of 2.00%, making them promising for hybrid integration with non-III - nitride photovoltaic devices. © 2014 The Japan Society of Applied Physics

Domaines: Science des matériaux [cond-mat.mtrl-sci]

S. Valdueza-Felip, A. Mukhtarova, Louis Grenet, Catherine Bougerol, C. Durand, et al.. Improved conversion efficiency of as-grown InGaN/GaN quantum-well solar cells for hybrid integration. Japanese Journal of Applied Physics, part 2 : Letters, 2014, 7 (3), pp.032301. ⟨10.7567/APEX.7.032301⟩. ⟨hal-00945851⟩