Impact of molecular structure of polymer in 193 nm resist performance

Abstract : Miniaturization in microelectronic technologies requests a development of new high-performance materials for microlithography with good resolution of the critical dimension. However, the real impact of polymer structure on lithographic performances is not yet well understood to predict the properties of formulated resist. Our approach is the synthesis and characterization of model resists and the understanding of the relationship between material - properties - processes. In this work we present the influence of the polymer's molecular weight in lithographic profile of the generated patterns. The limits of the polymer's molecular weight values based on model terpolymers, consisting of methacrylate matrix, for efficient patterning have been identified. Finally, the ineffective sensitivity and dissolution issue of the polymer resists having an average molecular weight of 30 kg/mol was extensively examined and attributed to the molecular weight of the polymer and more precisely to the radius of gyration of the polymer.
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Article dans une revue
Microelectronic Engineering, Elsevier, 2009, 86 (4-6), pp.796-799. 〈10.1016/j.mee.2008.11.072〉
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https://hal.archives-ouvertes.fr/hal-00945158
Contributeur : Dominique Richard <>
Soumis le : mardi 11 février 2014 - 17:15:26
Dernière modification le : mardi 19 mars 2019 - 16:08:15

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Esma Ismailova, Raluca Tiron, Christos L. Chochos, Cyril Brochon, Philippe Bandelier, et al.. Impact of molecular structure of polymer in 193 nm resist performance. Microelectronic Engineering, Elsevier, 2009, 86 (4-6), pp.796-799. 〈10.1016/j.mee.2008.11.072〉. 〈hal-00945158〉

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