Polysilicon CMOS TFTs inverters with a gate silicon oxide deposited using PECVD with hexamethyldisiloxane (HDMO)

G. Gautier , C.E. Viana , Samuel Crand (1) , Regis Rogel (1) , N.I. Morimoto , Olivier Bonnaud (1)

1 IETR - Institut d'Électronique et des Technologies du numéRique

G. Gautier, C.E. Viana, Samuel Crand, Regis Rogel, N.I. Morimoto, et al.. Polysilicon CMOS TFTs inverters with a gate silicon oxide deposited using PECVD with hexamethyldisiloxane (HDMO). ElectroChem. Soc. TFTVI, Oct 2002, Salt Lake City, United States. ⟨hal-00944710⟩