Control the Composition of Tantalum Oxynitride Films by Sputtering a Tantalum Target in Ar/O2/N2 Radiofrequency Magnetron Plasmas.

Angélique Bousquet (1) , Fadi Zoubian (1) , Joël Cellier (2) , T. Sauvage (3) , Eric Tomasella (1)

1 MI
2 ICCF - Institut de Chimie de Clermont-Ferrand
3 CEMHTI - Conditions Extrêmes et Matériaux : Haute Température et Irradiation

Tantalum oxynitride films can be deposited with a high versatility in composition by reactive sputtering of a tantalum target in Ar/O2/N2 mixtures. In this paper, plasma analysis was performed from simple to more complex Ar/O2/N2 gas mixtures and linked to the layer elemental composition. The presence of two reactive gases accelerates the appearance of Compound Sputtering Mode and modifies the nature of target surface. Hence, in Ar/O2/N2, nitrogen addition can lead to poison the target surface by a nitride but also by an oxide or by an oxynitride. Finally, this comprehension of interaction between target and reactive gas was used to select suitable flow rate conditions allowing tantalum oxynitride deposition with varying optical properties

Mots clés: optical emission spectroscopy (OES); optical properties; physical vapor deposition (PVD); Rutherford backscattering spectrometry (RBS); tantalum oxynitride

Angélique Bousquet, Fadi Zoubian, Joël Cellier, T. Sauvage, Eric Tomasella. Control the Composition of Tantalum Oxynitride Films by Sputtering a Tantalum Target in Ar/O2/N2 Radiofrequency Magnetron Plasmas.. Plasma Processes and Polymers, 2013, 10, pp.990-998. ⟨hal-00940260⟩