Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences - Archive ouverte HAL Accéder directement au contenu
Article Dans Une Revue Microelectronics Reliability Année : 2011

Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences

Résumé

This paper presents an original study about the effect of hot carrier injection stress on the DC offsets induced by electromagnetic interferences (EMI) on a nanometric NMOS transistor, which is one of the major sources of failures in analog circuits. Measurements and simulations based on a simple model (Sakurai-Newton model) of fresh and stressed transistors are presented showing significant variations of EMI-induced DC shifts of drain current.

Domaines

Electronique
Fichier principal
Vignette du fichier
MicroelectronicReliability_2011_full_paper_Binhong_V1.pdf (300.83 Ko) Télécharger le fichier
Origine : Fichiers produits par l'(les) auteur(s)
Loading...

Dates et versions

hal-00936069 , version 1 (03-02-2014)

Identifiants

Citer

Binhong Li, Nestor Berbel, Alexandre Boyer, Sonia Ben Dhia, Raul Fernandez-Garcia. Study of the impact of hot carrier injection to immunity of MOSFET to electromagnetic interferences. Microelectronics Reliability, 2011, 51, pp.1557-1560. ⟨10.1016/j.microrel.2011.06.010⟩. ⟨hal-00936069⟩
109 Consultations
314 Téléchargements

Altmetric

Partager

Gmail Facebook X LinkedIn More