Investigation on the multi-voids formation during electromigration degradation in dual damascene Cu lines

F. Bana (1) , L. Arnaud (2) , D. Ney (1) , Y. Wouters (3)

1 ST-CROLLES - STMicroelectronics [Crolles]
2 CEA-LETI - Commissariat à l'énergie atomique et aux énergies alternatives - Laboratoire d'Electronique et de Technologie de l'Information
3 SIMaP - Science et Ingénierie des Matériaux et Procédés

The work described in the present paper is about electromigration induced void formation mechanisms in Cu lines. An unusual behavior observed on the electrical resistance of some samples suggests the presence of more than one void in the stressed lines. The scope of this paper is about the origin of these voids; mainly how they appear in the lines and how they affect the Cu lines reliability. (C) 2013 Elsevier B.V. All rights reserved. Notes: ISI Document Delivery No.: 238NM

Domaines: Matériaux

F. Bana, L. Arnaud, D. Ney, Y. Wouters. Investigation on the multi-voids formation during electromigration degradation in dual damascene Cu lines. Microelectronic Engineering, 2013, 112, pp.130-132. ⟨10.1016/j.mee.2012.11.028⟩. ⟨hal-00935006⟩