Polysilicon CMOS TFTs inverters with a gate silicon oxide deposited using PECVD with hexamethyldisiloxane (HMDSO)

G. Gautier , Nathalie . Coulon (1) , C.E. Viana , Samuel Crand (1) , Regis Rogel (1) , N.I. Morimoto , Olivier Bonnaud (1)

1 IETR - Institut d'Électronique et des Technologies du numéRique

G. Gautier, Nathalie . Coulon, C.E. Viana, Samuel Crand, Regis Rogel, et al.. Polysilicon CMOS TFTs inverters with a gate silicon oxide deposited using PECVD with hexamethyldisiloxane (HMDSO). Polycristalline Semiconductors VI, 2002, 2002-23, pp.55-62. ⟨hal-00933274⟩