94-GHz load pull measurements of SiGe HBT by extracting output power density in W-band

Issam Hasnaoui (1) , Elodie Canderle (1) , Pascal Chevalier (2) , Daniel Gloria (2) , Christophe Gaquière (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 ST-CROLLES - STMicroelectronics [Crolles]

In this paper, we present a W-Band load pull test bench used to improve a characterization of Silicon Germanium Heterojunction Bipolar Transistor (SiGe HBT). High accuracy is obtained in Load-pull measurements at 94 GHz on lastgeneration SiGe HBTs by extracting the input reflection hot Sparameter (S'11), in order to understand the mechanisms of power behavior in the presence of millimeter-wave excitations. The device under test (0.12x4.9μm²) was characterized under large signal load pull showing attractive performance for power amplifier design. A state-of-the-art power density of 22.26 mW/μm2 has been extracted at 94 GHz.

Mots clés: Load Pull; SiGe HBTs; BiCMOS; W-band; hot S-parameter

Domaines: Sciences de l'ingénieur [physics]

Issam Hasnaoui, Elodie Canderle, Pascal Chevalier, Daniel Gloria, Christophe Gaquière. 94-GHz load pull measurements of SiGe HBT by extracting output power density in W-band. 8th European Microwave Integrated Circuits Conference, EuMIC 2013, and 43rd European Microwave Conference, EuMC 2013, European Microwave Week 2013, 2013, Nuremberg, Germany. paper EuMC/EuMIC04-4, 400-403. ⟨hal-00922493⟩