RF power potential of high-k metal gate 28 nm CMOS technology

R. Ouhachi (1) , A. Pottrain (1) , D. Ducatteau (1) , Etienne Okada (1) , Christophe Gaquière (1) , D. Gloria (2)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 ST-CROLLES - STMicroelectronics [Crolles]

This paper reports on the first RF microwave power characterization of High-k metal gate 28 nm CMOS devices. Measurement was performed on Load-pull configuration using a Nonlinear Vector Network Analyzer (NVNA) associated with a passive tuner at the fundamental frequency of 10 GHz. Behavior of these High-k metal gate 28 nm CMOS was analyzed on large signal conditions in class A operation. The maximal drain voltage withstanding was determined for various topologies. Transistors behavior was analyzed for optimal load impedance condition in terms of microwave output power and power added efficiency. Finally, a comparison with the standard 45 nm CMOS was achieved.

R. Ouhachi, A. Pottrain, D. Ducatteau, Etienne Okada, Christophe Gaquière, et al.. RF power potential of high-k metal gate 28 nm CMOS technology. International Semiconductor Conference, CAS 2013, 2013, Sinaia, Romania. paper 9057, 181-184, ⟨10.1109/SMICND.2013.6688649⟩. ⟨hal-00922406⟩