Thermal modeling and measurements of AlGaN/GaN HEMTs including thermal boundary resistance

Raphaël Sommet (1) , Guillaume Mouginot (1) , Raymond Quéré (1) , Z. Ouarch , M. Camiade

1 XLIM-C2S2 - C2S2

In this paper an analysis of thermal behavior of microwave power AlGaN/GaN HEMTs has been carried out through pulsed current-voltage (PIV) measurements and S parameters. A special care about trapping effects has been followed where it is shown Error! Reference source not found. that the thermal resistance of the device can be accurately determined provided that some assumptions on the trapping behavior of the device are verified. The values obtained have been checked by three dimensional finite element (3D-FE) simulations. Finally, the Thermal Boundary Resistance (TBR) between GaN/SiC has been extracted and compared to literature. The results we have obtained are in line with what can be found. Extended paper of THERMINIC Conférence

Domaines: Electronique

Raphaël Sommet, Guillaume Mouginot, Raymond Quéré, Z. Ouarch, M. Camiade. Thermal modeling and measurements of AlGaN/GaN HEMTs including thermal boundary resistance. Microelectronics Journal, 2012, 43 (9), pp.611-617. ⟨10.1016/j.mejo.2011.07.009⟩. ⟨hal-00917706⟩