Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility

Olivier Nier (1, 2, 3, 4) , Denis Rideau (2) , Yan Michel Niquet (5) , Frédéric Monsieur (2) , van Dai Nguyen (6) , François Triozon (3) , Antoine Cros (2) , Raphael Clerc (7) , Jean Charles C Barbé (3) , Pierpaolo Palestri (4) , David Esseni (4) , Ivan Duchemin (5) , Leo Smith (8) , Luca Silvestri (8) , Franck Nallet (8) , Clément Tavernier (2) , Hervé Jaouen (2) , Luca Selmi (4)

1 IMEP - Institut de Microélectronique, Electromagnétisme et Photonique
2 ST-CROLLES - STMicroelectronics [Crolles]
3 DCOS - Département Composants Silicium
4 Università degli Studi di Udine - University of Udine [Italie]
5 LSIM - Laboratory of Atomistic Simulation
6 INAC - Institut Nanosciences et Cryogénie
7 LHC - Laboratoire Hubert Curien
8 Synopsys Inc.

Mobility in high-k/metal-gate Ultra-Thin Body and Box Fully Depleted SOI devices has been extensively investigated by means of multi-scale simulations and experimental data. Split-CV mobility measurements have been performed for various Interfacial Layer Equivalent Oxide Thickness allowing an investigation of the physical mechanisms responsible for the mobility degradation at highk/ Interfacial layer interface. The impact of the back bias on transport properties is investigated and mobility enhancement in the reverse regime (back gate inversion) is studied. A multi-scale simulation strategy is ranging from quantum Non-equilibrium Green's Functions to semi-classical Kubo Greenwood approach. These advanced solvers made possible a throughout calibration of empirical TCAD mobility models.

Mots clés: Split C-V mobility measurements; UTBB-FDSOI devices; Multi-scale simulations; NEGF; Back bias; TCAD

Domaines: Micro et nanotechnologies/Microélectronique

Olivier Nier, Denis Rideau, Yan Michel Niquet, Frédéric Monsieur, van Dai Nguyen, et al.. Multi-scale strategy for high-k/metal-gate UTBB-FDSOI devices modeling with emphasis on back bias impact on mobility. Journal of Computational Electronics, 2013, 12, pp.675-684. ⟨10.1007/s10825-013-0532-1⟩. ⟨hal-00916912⟩