Highly efficient spin transport in epitaxial graphene on SiC

Bruno Dlubak (1) , Marie-Blandine Martin (1) , Cyrile Deranlot (1) , Bernard Servet (2) , Stéphane Xavier (2) , Richard Mattana (1) , Mike Sprinkle (3) , Claire Berger (4) , Walt A. de Heer (3) , Frédéric Petroff (1) , Abdelmadjid Anane (1) , Pierre Seneor (1) , Albert Fert (1)

1 Laboratoire Albert Fert (ex-UMPhy Unité mixte de physique CNRS/Thales)
2 Thales Research & Technology France
3 School of Physics [Atlanta]
4 NEEL - QuantECA - Circuits électroniques quantiques Alpes

Spin information processing is a possible new paradigm for post-CMOS (complementary metal-oxide semiconductor) electronics and efficient spin propagation over long distances is fundamental to this vision. However, despite several decades of intense research, a suitable platform is still wanting. We report here on highly efficient spin transport in two-terminal polarizer/analyser devices based on high-mobility epitaxial graphene grown on silicon carbide. Taking advantage of high-impedance injecting/detecting tunnel junctions, we show spin transport efficiencies up to 75%, spin signals in the mega-ohm range and spin diffusion lengths exceeding 100 {\mu}m. This enables spintronics in complex structures: devices and network architectures relying on spin information processing, well beyond present spintronics applications, can now be foreseen.

Domaines: Science des matériaux [cond-mat.mtrl-sci]

Bruno Dlubak, Marie-Blandine Martin, Cyrile Deranlot, Bernard Servet, Stéphane Xavier, et al.. Highly efficient spin transport in epitaxial graphene on SiC. Nature Physics, 2012, 8, pp.557-561. ⟨10.1038/nphys2331⟩. ⟨hal-00911221⟩