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Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors

Abstract : The maximum oscillation frequency (fmax) quantifies the practical upper bound for useful circuit operation. We report here an fmax of 70 GHz in transistors using epitaxial graphene grown on the C-face of SiC. This is a significant improvement over Si-face epitaxial graphene used in the prior high frequency transistor studies, exemplifying the superior electronics potential of C-face epitaxial graphene. Careful transistor design using a high {\kappa} dielectric T-gate and self-aligned contacts, further contributed to the record-breaking fmax.
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https://hal.archives-ouvertes.fr/hal-00911215
Contributor : Claire Berger <>
Submitted on : Friday, November 29, 2013 - 3:32:33 AM
Last modification on : Wednesday, February 10, 2021 - 11:06:12 AM

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Zelei Guo, Rui Dong, Partha Sarathi Chakraborty, Nelson Lourenco, James Palmer, et al.. Record Maximum Oscillation Frequency in C-face Epitaxial Graphene Transistors. Nano Letters, American Chemical Society, 2013, 13 (3), pp.942-947. ⟨10.1021/nl303587r⟩. ⟨hal-00911215⟩

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