How to Interpret the Reflected Laser Probe Signal of Multiple Elementary Substructures in Very Deep Submicron Technologies

Abstract : The constant size reduction of the elementary structures in integrated circuits (ICs) and their increasing complexity pushes laser probing techniques to their limits. For old technologies these techniques were powerful tools in defects detection and internal analysis, but now the major limitations of the laser spot size implies the understanding of the complex information contained in the reflected beam when it covers an area of multiple elementary structures. Knowing the contribution of each elementary structure covered by the laser spot in the reflected laser beam is the key to have a good analysis and interpretation of the probed area.
Type de document :
Communication dans un congrès
ASM international. 39th International Symposium for Testing and Failure Analysis (ISTFA 2013), Nov 2013, San José, United States. ASM international, pp.471-481, 2013
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https://hal.archives-ouvertes.fr/hal-00903364
Contributeur : Frédéric Darracq <>
Soumis le : mardi 12 novembre 2013 - 09:40:11
Dernière modification le : mercredi 29 novembre 2017 - 14:55:37

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  • HAL Id : hal-00903364, version 1

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Mohamed Mehdi Rebai, Frédéric Darracq, D. Lewis, Philippe Perdu, Kévin Sanchez. How to Interpret the Reflected Laser Probe Signal of Multiple Elementary Substructures in Very Deep Submicron Technologies. ASM international. 39th International Symposium for Testing and Failure Analysis (ISTFA 2013), Nov 2013, San José, United States. ASM international, pp.471-481, 2013. 〈hal-00903364〉

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