Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications

Dhouha Othman (1, 2) , Stéphane Lefebvre (1) , Mounira Berkani (1, 3) , Zoubir Khatir (4) , Ali Ibrahim (4) , Arezki Bouzourene (2)

1 SATIE - Systèmes et Applications des Technologies de l'Information et de l'Energie
2 Thales Research and Technology [Palaiseau]
3 UPEC UP12 - Université Paris-Est Créteil Val-de-Marne - Paris 12
4 IFSTTAR/LTN - Laboratoire des Technologies Nouvelles

This paper evaluates robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for medium power aeronautics applications. The first part focuses on switching performances with effects of gate resistance and load current level. The second part focuses on robustness results showing the weakness of the gate under short-circuit test.

Mots clés: Silicon Carbide (SiC); Ageing; Device characterisation; MOSFET; Robustness; "Silicon Carbide (SiC) "; "Ageing "; "Device characterisation "; "MOSFET "; "Robustness "

Domaines: Energie électrique

Dhouha Othman, Stéphane Lefebvre, Mounira Berkani, Zoubir Khatir, Ali Ibrahim, et al.. Investigation of 1.2 kV investigation of SiC MOSFETs for aeronautics applications. Power Electronics and Applications (EPE), 2013 15th European Conference on, Sep 2013, Lille, France. pp.1-9, ⟨10.1109/EPE.2013.6634665⟩. ⟨hal-00881162⟩