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Negative Bias Temperature Instability Effect on the Single Event Transient Sensitivity of a 65 nm CMOS Technology

Abstract : Impact of NBTI degradation on the SET sensitivity of 65 nm CMOS test structures is investigated. Pre- and post-aging SET laser thresholds measurements on chains of gates indicate a decrease of SET sensitivity due to NBTI.
Keywords : Laser SET NBTI
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https://hal.archives-ouvertes.fr/hal-00880480
Contributor : Frédéric Darracq <>
Submitted on : Wednesday, November 6, 2013 - 11:24:41 AM
Last modification on : Thursday, July 25, 2019 - 4:34:16 PM

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  • HAL Id : hal-00880480, version 1

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Issam El Moukhtari, Vincent Pouget, Frédéric Darracq, Camille Larue, Philippe Perdu, et al.. Negative Bias Temperature Instability Effect on the Single Event Transient Sensitivity of a 65 nm CMOS Technology. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2013, 60 (4), pp.2635-2639. ⟨hal-00880480⟩

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