Negative Bias Temperature Instability Effect on the Single Event Transient Sensitivity of a 65 nm CMOS Technology

Abstract : Impact of NBTI degradation on the SET sensitivity of 65 nm CMOS test structures is investigated. Pre- and post-aging SET laser thresholds measurements on chains of gates indicate a decrease of SET sensitivity due to NBTI.
keyword : NBTI SET Laser
Type de document :
Article dans une revue
IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2013, 60 (4), pp.2635-2639
Liste complète des métadonnées

https://hal.archives-ouvertes.fr/hal-00880480
Contributeur : Frédéric Darracq <>
Soumis le : mercredi 6 novembre 2013 - 11:24:41
Dernière modification le : mercredi 11 octobre 2017 - 01:12:17

Identifiants

  • HAL Id : hal-00880480, version 1

Citation

Issam El Moukhtari, Vincent Pouget, Frédéric Darracq, Camille Larue, Philippe Perdu, et al.. Negative Bias Temperature Instability Effect on the Single Event Transient Sensitivity of a 65 nm CMOS Technology. IEEE Transactions on Nuclear Science, Institute of Electrical and Electronics Engineers, 2013, 60 (4), pp.2635-2639. 〈hal-00880480〉

Partager

Métriques

Consultations de la notice

136