Robustness of 1.2 kV SiC MOSFET devices

Dhouha Othman (1, 2, 3) , Stéphane Lefebvre (1) , Mounira Bouarroudj-Berkani (1) , Zoubir Khatir (2) , Ali Ibrahim (2) , Arezki Bouzourene (3)

1 SATIE - Systèmes et Applications des Technologies de l'Information et de l'Energie
2 IFSTTAR/LTN - Laboratoire des Technologies Nouvelles
3 Thales Research and Technology [Palaiseau]

This paper provides an evaluation of robustness and performances of two types of 1.2 kV SiC MOSFETs in order to investigate these power devices for aircraft applications in medium power range. The paper focuses on robustness results showing the weakness of the gate under short-circuit tests. Observed failures appear at the gate level with effects on the mode of failure depending of the short-circuit duration.

Mots clés: SiC; robustness; Aeronitics converters; MOSFET

Domaines: Energie électrique; Electronique

Dhouha Othman, Stéphane Lefebvre, Mounira Bouarroudj-Berkani, Zoubir Khatir, Ali Ibrahim, et al.. Robustness of 1.2 kV SiC MOSFET devices. Microelectronics Reliability, 2013, 53 (9-11), pp.1735-1738. ⟨10.1016/j.microrel.2013.07.072⟩. ⟨hal-00876938⟩