1540 to 1645 nm continuous VCSEL emission based on quantum dashes

Cyril Paranthoën (1) , Christophe Levallois (1) , Jean-Philippe Gauthier (2) , Fethallah Taleb (1) , Nicolas Chevalier (1) , Mathieu Perrin (1) , Yoan Léger (1) , Olivier de Sagazan (2) , Alain Le Corre (1)

1 FOTON - Fonctions Optiques pour les Technologies de l'informatiON
2 IETR - Institut d'Électronique et des Technologies du numéRique

We report on an optically excited InAs quantum dash vertical cavity surface emitting lasers (VCSEL) on InP substrate. By introducing a wedge microcavity design, we obtain a spatial dependence of the resonant wavelength along the wafer, enabling us to monitor the gain material bandwidth. In this paper we show a continuously variable VCSEL emission from 1645 down to 1540 nm all across the wafer, a consequence of the important and wide gain afforded by the use of optimized quantum dashes.

Mots clés: quantum dashes; wide gain; VCSEL

Domaines: Optique / photonique; Science des matériaux [cond-mat.mtrl-sci]

Cyril Paranthoën, Christophe Levallois, Jean-Philippe Gauthier, Fethallah Taleb, Nicolas Chevalier, et al.. 1540 to 1645 nm continuous VCSEL emission based on quantum dashes. 25th International Conference on Indium Phosphide and Related Materials (IPRM), May 2013, Kobe, Japan. pp.1-2, ⟨10.1109/ICIPRM.2013.6562594⟩. ⟨hal-00874600⟩