Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT

François Lecourt (1) , Alain Agboton (1) , Nico Ketteniss (2) , Hannes Behmenburg (2) , N. Defrance (1) , Virginie Hoel (1) , Holger Kalisch (2) , Andrei Vescan (2) , Michael Heuken (2) , Jean-Claude de Jaeger (1)

1 IEMN - Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520
2 RWTH - Rheinisch-Westfälische Technische Hochschule Aachen University

Depletion-mode high-electron mobility transistors (HEMTs) based on a quaternary barrier In 0.11 Al 0.72 Ga 0.17 N/GaN heterostructure on sapphire substrate are fabricated and characterized. This structure shows a very high Hall electron mobility of 2200 cm 2 /V·s, which is the highest value ever reported on In-containing GaN-based HEMTs. For T-shaped gate transistor with a gate length of 75 nm, current gain (f t ) and power gain (f max ) cutoff frequencies of 113 and 200 GHz are extracted from S-parameter measurements, respectively. Nonlinear characterization of a T-shaped gate device with a gate length of 225 nm gives an output power density of 2 W/mm at 40 GHz. These results clearly demonstrate the capabilities of such quaternary barrier-based devices.

Mots clés: Logic gates; HEMTs; Performance evaluation; Substrates; Gain; Delays

Domaines: Sciences de l'ingénieur [physics]

François Lecourt, Alain Agboton, Nico Ketteniss, Hannes Behmenburg, N. Defrance, et al.. Power performance at 40 GHz on quaternary barrier InAlGaN/GaN HEMT. IEEE Electron Device Letters, 2013, 34, pp.978-980. ⟨10.1109/LED.2013.2266123⟩. ⟨hal-00872022⟩