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Article Dans Une Revue Journal of Applied Physics Année : 2013

Electronic structure and transport properties of Si nanotubes

Résumé

The electronic structure and the transport properties of Si nanotubes with outer diameter between 2 and 20 nm are investigated using fully atomistic simulations. A formula is given for the energy of the band edges versus diameter and thickness. The phonon-limited mobility of electrons and holes is calculated and is compared to the case of Si nanowires. It is found that the thickness of the nanotubes is the main parameter controlling the shape of the band structure and the values of the effective masses. Configurations with expected best carrier mobilities are discussed
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hal-00871969 , version 1 (25-05-2022)

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J. Li, T. Gu, C. Delerue, Y.M. Niquet. Electronic structure and transport properties of Si nanotubes. Journal of Applied Physics, 2013, 114 (5), pp.053706. ⟨10.1063/1.4817527⟩. ⟨hal-00871969⟩
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