Identification of the (root E+1/E)-dependence of porous low-k time dependent dielectric breakdown using over one year long package level tests

E. Chery (1) , X. Federspiel (1) , Daniel Roy (1) , F. Volpi (2) , J.M. Chaix (2)

1 ST-CROLLES - STMicroelectronics [Crolles]
2 SIMaP - Science et Ingénierie des Matériaux et Procédés

In the present paper, different analytical lifetime models have been assessed on porous low-k dielectrics (in CMOS 28 nm structures) to predict lifetimes. Quantitative comparisons are made thanks to over-one-year-long low-field reliability tests. The lucky electron model (fitted at high fields) shows its higher ability to predict the dielectric mean-time-to-failure (MTTF) at low-field. Then the fitting parameters of this model (alpha = 32 et gamma = 14.5) have been determined independently from this MTTF fitting procedure: these new values (alpha = 31 et gamma = 14), extracted from the analysis of both Poole-Frenkel conduction and initial leakage current, are in very good agreement with the MTTF-fitted ones. The consequences of this model are discussed. (C) 2013 Elsevier B.V. All rights reserved.

Domaines: Matériaux

E. Chery, X. Federspiel, Daniel Roy, F. Volpi, J.M. Chaix. Identification of the (root E+1/E)-dependence of porous low-k time dependent dielectric breakdown using over one year long package level tests. Microelectronic Engineering, 2013, 109, pp.90-93. ⟨10.1016/j.mee.2013.03.085⟩. ⟨hal-00870699⟩