Kinetic evolution of blistering in hydrogen-implanted silicon

C. Coupeau (1) , G. Parry (2) , Jérôme Colin (1) , M.-L. David (3) , J. Labanowski (4) , J. Grilhé (1)

1 SIMAC - Surface, Interfaces et MAtériaux sous Contrainte [Institut Pprime]
2 SIMaP - Science et Ingénierie des Matériaux et Procédés
3 PDP - Physique des Défauts et de la Plasticité [Institut Pprime]
4 IC2MP [Poitiers] - Institut de chimie des milieux et matériaux de Poitiers [UMR 7285]

Silicon wafers have been implanted with hydrogen at high fluence. The kinetic evolution of the buckling structures has been observed in situ by atomic force microscopy during a thermal annealing at 200 degrees C. It is shown that the blistering of the silicon wafers occurs at the first stage of the annealing without any noticeable threshold. The deflection of the blisters continuously increases with time, and some blisters are observed to coalesce. The time evolution of the internal pressure inside the cavities is finally determined from the blister dimensions with the help of an elastic analytical model.

Domaines: Matériaux

C. Coupeau, G. Parry, Jérôme Colin, M.-L. David, J. Labanowski, et al.. Kinetic evolution of blistering in hydrogen-implanted silicon. Applied Physics Letters, 2013, 103 (3), pp.031908. ⟨10.1063/1.4813858⟩. ⟨hal-00869260⟩