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Communication Dans Un Congrès Année : 2013

Noise characteristics of AlInN/GaN HEMTs at microwave frequencies

Résumé

The microwave noise parameters measured on AlInN/GaN HEMTs devices with different gate length values are presented in this paper. 0.15-µm HEMTs achieve a maximum current density of 700 mA/mm at VGS= 0 V and a measured extrinsic transconductance of 350 mS/mm. The current gain cutoff frequency and the maximum oscillation frequency are 40 GHz and 70 GHz, respectively. At 10 (20) GHz, the device exhibits a minimum noise figure of 0.8 dB (1.8) dB with an associated power gain of 14 (8.8) dB. Below 8 GHz, the gate leakage current and a generation-recombination noise source with a very short time constant limit the noise performance.

Domaines

Electronique
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Dates et versions

hal-00859789 , version 1 (09-09-2013)

Identifiants

  • HAL Id : hal-00859789 , version 1

Citer

Séraphin Dieudonné Nsele, Laurent Escotte, Jean-Guy Tartarin, Stéphane Piotrowicz. Noise characteristics of AlInN/GaN HEMTs at microwave frequencies. International Conference on Noise and Fluctuations, Jun 2013, Montpellier, France. pp.10.1109/ICNF.2013.6578989. ⟨hal-00859789⟩
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