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Article Dans Une Revue Applied Physics Letters Année : 2013

Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design

Résumé

We report on AlGaN/GaN multi-quantum-well structures displaying intersubband absorption in the THz spectral range. First, we theoretically analyze the weaknesses of the state-of-the-art GaN-based step-quantum-well architecture from an optoelectronic standpoint. We then propose a modified geometry with improved structural robustness considering the uncertainties associated to the growth. This later structure, consisting of 4-layer quantum wells, has been grown by plasma-assisted molecular-beam epitaxy and characterized structurally and optically. Low temperature absorption of samples with different Si doping levels confirms intersubband transitions in the far-infrared, centred at 28 μm.
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Dates et versions

hal-00855805 , version 1 (30-08-2013)

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M. Beeler, Catherine Bougerol, Edith Bellet-Amalric, Eva Monroy. Terahertz absorbing AlGaN/GaN multi-quantum-wells: Demonstration of a robust 4-layer design. Applied Physics Letters, 2013, 103, pp.091108. ⟨10.1063/1.4819950⟩. ⟨hal-00855805⟩
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