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Article Dans Une Revue Applied Physics Letters Année : 2013

Metal oxide semiconductor structure using oxygen-terminated diamond

Résumé

Metal-oxide-semiconductor structures with aluminum oxide as insulator and p-type (100) mono-crystalline diamond as semiconductor have been fabricated and investigated by capacitance versus voltage and current versus voltage measurements. The aluminum oxide dielectric was deposited using low temperature atomic layer deposition on an oxygenated diamond surface. The capacitance voltage measurements demonstrate that accumulation, depletion, and deep depletion regimes can be controlled by the bias voltage, opening the route for diamond metal-oxide-semiconductor field effect transistor. A band diagram is proposed and discussed.

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Electronique
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Dates et versions

hal-00854602 , version 1 (27-08-2013)

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Gauthier Chicot, Aurélien Maréchal, Renaud Motte, Pierre Muret, Etienne Gheeraert, et al.. Metal oxide semiconductor structure using oxygen-terminated diamond. Applied Physics Letters, 2013, 102 (24), pp.242108. ⟨10.1063/1.4811668⟩. ⟨hal-00854602⟩
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