B. Mheen, Y. Song, and A. Theuwissen, Negative Offset Operation of Four-Transistor CMOS Image Pixels for Increased Well Capacity and Suppressed Dark Current, IEEE Electron Device Letters, vol.29, issue.4, pp.347-349, 2008.
DOI : 10.1109/LED.2008.917812

M. Sarkar, B. Buttgen, and A. Theuwissen, Feedforward Effect in Standard CMOS Pinned Photodiodes, IEEE Transactions on Electron Devices, vol.60, issue.3, pp.1154-1161, 2013.
DOI : 10.1109/TED.2013.2238675

J. Bogaerts, G. Meynants, K. Van-wichelen, and E. Gillisjans, Recent radiation testing on 180 nm and 110 nm CMOS image sensor processes, 2012.

T. Watanabe, J. Park, S. Aoyama, K. Isobe, and S. Kawahito, Effects of Negative-Bias Operation and Optical Stress on Dark Current in CMOS Image Sensors, IEEE Transactions on Electron Devices, vol.57, issue.7, pp.1512-1518, 2010.
DOI : 10.1109/TED.2010.2049220

Y. Taur and T. H. Ning, Fundamentals of Modern VLSI Devices, 2009.

A. Krymski and K. Feklistov, Estimates for scaling of pinned photodiodes, Proc. IEEE Workshop On CCD and Advanced Image Sensors, pp.60-63, 2005.

J. Tan, B. Buttgen, and A. Theuwissen, Analyzing the Radiation Degradation of 4-Transistor Deep Submicron Technology CMOS Image Sensors, IEEE Sensors Journal, vol.12, issue.6, pp.2278-2286, 2012.
DOI : 10.1109/JSEN.2012.2186287